IRF530PBF VISHAY Power MOSFET

The IRF530PBF from Vishay is a third‑generation N‑channel power MOSFET designed for fast switching, low on‑resistance, and cost‑effective high‑voltage applications. For selection, it has a 100 V drain‑source voltage, 14 A continuous drain current, and a maximum Rds(on) of 160 mΩ at 10 V gate drive to reduce conduction losses. The gate charge is a low 26 nC and the input capacitance is 670 pF, which allows high‑speed switching with lower gate‑driver requirements. The threshold voltage of 4 V and ±20 V gate‑source voltage, along with an 88 W power dissipation rating and a –55 °C to +175 °C junction range, ensure robust operation in harsh environments. The TO‑220AB through‑hole package is easy to mount and heatsink, which makes it suitable for a wide range of medium‑power applications. In application, it excels in switching‑mode power supplies, DC‑DC converters, PWM motor control, solenoid and relay drivers, audio amplifiers, and RF amplifiers. It is ideal for industrial automation, consumer electronics, and other cost‑sensitive designs where reliable high‑voltage switching is required. In stock at HL Electronics – request a quote for fast delivery.