IRF540PBF VISHAY Power MOSFET
The IRF540PBF from Vishay is a third‑generation N‑channel HEXFET® power MOSFET in TO‑220AB, providing 100V breakdown, 28A continuous drain current, and a low 77mΩ max RDS(on) at 10V. For selection, the 72nC gate charge and 1700pF input capacitance enable fast, efficient switching with simple drive requirements; a 4V threshold, ±20V gate‑source rating, 150W dissipation and a –55°C to +175°C junction range ensure flexible, rugged operation. In application, it excels in DC‑DC converters, switched‑mode power supplies, motor‑drive inverters, power factor correction, and UPS systems. It also serves solar inverters, industrial automation, automotive body electronics, battery‑management systems, and general consumer power‑switching circuits where high‑voltage, high‑current switching with low conduction loss is critical. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.74 |
| 100+ | $ 0.59 |
| 1000+ | $ 0.57 |
| 15000+ | $ 0.56 |
| 30000+ | $ 0.56 |
Technical Specifications
- Part No.IRF540PBF
- Series -
- Category Discrete Semiconductor Products
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 77 mOhm @ 17A, 10V
- Power Dissipation (Max) 150W (Tc)
- Supplier Device Package TO-220AB
- Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
- Drain to Source Voltage (Vdss) 100V
- Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
