IRF610PBF VISHAY Power MOSFET

Choose this 200V, 3.3A N-Channel MOSFET when your design requires a proven, widely-available high-voltage switch in a through-hole TO-220AB package. Its low gate charge of 8.2nC and 140pF input capacitance enable fast, efficient switching at moderate frequencies. Best suited for off-line SMPS start-up circuits, electronic ballasts, DC-DC converters, motor drives, and relay replacement in industrial controls. The 1.5Ω RDS(on) fits applications where conduction losses are secondary to voltage rating and ruggedness. Fully avalanche rated with 36W power dissipation capability, it handles demanding line-voltage environments reliably. In stock at HL Electronics – request a quote for fast delivery.

IRF610PBF - VISHAY - main product image
Part No.:IRF610PBF
Brand:VISHAY
Date Code:
Stock:16,690
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.33
50+ $ 0.26
1000+ $ 0.24
20000+ $ 0.24
30000+ $ 0.23

Technical Specifications

  • Part No.IRF610PBF
  • Series -
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Tube
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Through Hole
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 1.5 Ohm @ 2A, 10V
  • Power Dissipation (Max) 36W (Tc)
  • Supplier Device Package TO-220AB
  • Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
  • Drain to Source Voltage (Vdss) 200V
  • Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
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