IRF820PBF VISHAY Power MOSFET

The IRF820PBF from Vishay is a classic N-channel power MOSFET rated for 500V drain-to-source voltage and 2.5A continuous drain current, delivering 50W power dissipation in a TO-220AB package. For new designs, select this through-hole device when you need a robust, easily mountable switch for offline power supplies, flyback converters, or high-voltage DC-DC stages. Its 3-ohm max Rds(on) at 10V gate drive and 24nC gate charge make it well-suited for low-frequency switching applications where ruggedness matters more than ultra-low resistance. Typical applications include LED lighting drivers, auxiliary power supplies for industrial equipment, motor start-up circuits, and simple electronic ballasts. The wide -55°C to +150°C junction temperature range ensures reliability in harsh thermal environments. Use this MOSFET when prioritizing proven reliability, easy prototyping, and wide safety margins over the lowest on-resistance. In stock at HL Electronics – request a quote for fast delivery.

IRF820PBF - VISHAY - main product image
Part No.:IRF820PBF
Brand:VISHAY
Date Code:
Stock:39,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.40
100+ $ 0.32
1000+ $ 0.30

Technical Specifications

  • Part No.IRF820PBF
  • Series -
  • Category Discrete Semiconductor Products
  • FET Type N-Channel
  • Packaging Tube
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Through Hole
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 3 Ohm @ 1.5A, 10V
  • Power Dissipation (Max) 50W (Tc)
  • Supplier Device Package TO-220AB
  • Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
  • Drain to Source Voltage (Vdss) 500V
  • Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
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