IRF820PBF VISHAY Power MOSFET
The IRF820PBF from Vishay is a classic N-channel power MOSFET rated for 500V drain-to-source voltage and 2.5A continuous drain current, delivering 50W power dissipation in a TO-220AB package. For new designs, select this through-hole device when you need a robust, easily mountable switch for offline power supplies, flyback converters, or high-voltage DC-DC stages. Its 3-ohm max Rds(on) at 10V gate drive and 24nC gate charge make it well-suited for low-frequency switching applications where ruggedness matters more than ultra-low resistance. Typical applications include LED lighting drivers, auxiliary power supplies for industrial equipment, motor start-up circuits, and simple electronic ballasts. The wide -55°C to +150°C junction temperature range ensures reliability in harsh thermal environments. Use this MOSFET when prioritizing proven reliability, easy prototyping, and wide safety margins over the lowest on-resistance. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.40 |
| 100+ | $ 0.32 |
| 1000+ | $ 0.30 |
Technical Specifications
- Part No.IRF820PBF
- Series -
- Category Discrete Semiconductor Products
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 3 Ohm @ 1.5A, 10V
- Power Dissipation (Max) 50W (Tc)
- Supplier Device Package TO-220AB
- Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
- Drain to Source Voltage (Vdss) 500V
- Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
