MJD45H11-1G ON Single

MJD45H11-1G - ON - main product image
Part No.:MJD45H11-1G
Brand:ON
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.43
75+ $ 0.40
1500+ $ 0.40
3750+ $ 0.40

Technical Specifications

  • Part No.MJD45H11-1G
  • Series -
  • Category Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single
  • Packaging Tube
  • Part Status Active
  • Power - Max 1.75W
  • Mounting Type Through Hole
  • Transistor Type PNP
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Frequency - Transition 90MHz
  • Supplier Device Package I-Pak
  • Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
  • Current - Collector (Ic) (Max) 8A
  • Current - Collector Cutoff (Max) 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
  • Voltage - Collector Emitter Breakdown (Max) 80V
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