MJE350 ST Bipolar (BJT)

The MJE350 is a PNP high-voltage bipolar power transistor from STMicroelectronics in TO-225 (SOT-82) through-hole package, featuring -300 V collector-emitter voltage and 0.5 A continuous collector current. For selection, verify collector-emitter voltage rating (VCEO) of 300 V for high-voltage applications, DC current gain (hFE) characteristics, collector-emitter saturation voltage for conduction losses, transition frequency for switching speed, power dissipation capability, and operating junction temperature from -65°C to +150°C. Features include high voltage capability for demanding circuits, TO-225 package for through-hole mounting, and complementary NPN type for push-pull designs. Ideal for high-voltage audio amplifier drivers and output stages, switching power supplies, industrial control circuits, DC-DC converters, and any high-voltage low-to-medium current switching or linear amplification application requiring PNP bipolar transistor with 300 V voltage rating. In stock at HL Electronics – request a quote for fast delivery.