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PMXB360ENEAZ Nexperia Power MOSFET
Partno：PMXB360ENEAZEncapsulation：
Brand：NexperiaParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.163213
Total：
$ 0.16
Other Platform Purchase Links： No Data
- PartNoPMXB360ENEAZ
- Categories Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 80V
- Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 130pF @ 40V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 400mW (Ta), 6.25W (Tc)
- Rds On (Max) @ Id, Vgs 450 mOhm @ 1.1A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package DFN1010D-3