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PSMN1R3-30YL,115 Nexperia Power MOSFET
Partno：PSMN1R3-30YL,115Encapsulation：
Brand：NexperiaParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 1.059376
Total：
$ 1.06
Other Platform Purchase Links： No Data
- PartNoPSMN1R3-30YL,115
- Categories Discrete Semiconductor Products
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 6227pF @ 12V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 121W (Tc)
- Rds On (Max) @ Id, Vgs 1.3 mOhm @ 15A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package LFPAK56, Power-SO8