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RQ3E120GNTB ROHM Power MOSFET

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Partno：RQ3E120GNTBEncapsulation：

Brand：ROHMParticular Year：

Classification：Packing：

Stock：3000SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.25691
Total： $ 0.26
Order Quantity： - + Get Sample / Inquiry →
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  • PartNoRQ3E120GNTB
  • Categories Discrete Semiconductor Products
  • Series -
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 30V
  • Current - Continuous Drain (Id) @ 25°C 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs(th) (Max) @ Id 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 590pF @ 15V
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 2W (Ta), 16W (Tc)
  • Rds On (Max) @ Id, Vgs 8.8 mOhm @ 12A, 10V
  • Operating Temperature 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-HSMT (3.2x3)
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