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SBR1U200P1Q-7 DIODES Fast Recovery Diode

For high-efficiency rectification in compact designs, the SBR1U200P1Q-7 stands out with its Super Barrier technology, optimized for fast switching. To select it, confirm your circuit’s peak reverse voltage does not exceed 200V and the average forward current stays within 1A. Its key advantage is the ultra-low forward voltage drop of just 820mV at 1A combined with a 25ns fast recovery time, minimizing power loss. This makes it ideal for high-frequency DC-DC converters, secondary-side rectification in power supplies, and reverse polarity protection in portable devices. The wide -65°C to 175°C junction temperature range and the space-saving PowerDI™ 123 package suit thermally demanding, densely packed industrial and consumer electronics. In stock at HL Electronics – request a quote for fast delivery.

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Partno：SBR1U200P1Q-7Encapsulation：

Brand：DIODESParticular Year：

Classification：Packing：

Stock：73090SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.214595
Total： $ 0.21
Order Quantity： - + Get Sample / Inquiry →
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  • PartNoSBR1U200P1Q-7
  • Category Discrete Semiconductor Products > Diodes - Rectifiers - Single
  • Series -
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Diode Type Super Barrier
  • Voltage - DC Reverse (Vr) (Max) 200V
  • Current - Average Rectified (Io) 1A
  • Voltage - Forward (Vf) (Max) @ If 820mV @ 1A
  • Speed Fast Recovery =< 500ns, >200mA (Io)
  • Reverse Recovery Time (trr) 25ns
  • Current - Reverse Leakage @ Vr 500µA @ 200V
  • Capacitance @ Vr, F -
  • Mounting Type Surface Mount
  • Supplier Device Package PowerDI™ 123
  • Operating Temperature - Junction -65°C ~ 175°C
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