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SCT2H12NZGC11 ROHM Electronic Component
Partno：SCT2H12NZGC11Encapsulation：
Brand：ROHMParticular Year：
Classification：Packing：
Stock：3271SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 2.389262
Total：
$ 2.39
Other Platform Purchase Links： No Data
- PartNoSCT2H12NZGC11
- Categories Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss) 1700V
- Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs(th) (Max) @ Id 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs 14nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V
- Vgs (Max) +22V, -6V
- FET Feature -
- Power Dissipation (Max) 35W (Tc)
- Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1.1A, 18V
- Operating Temperature 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-3PFM