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SI2312BDS-T1-E3 VISHAY Power MOSFET
The SI2312BDS-T1-E3 is a 20V N-Channel TrenchFET® MOSFET in a SOT-23 package, ideal for low-voltage, logic-level load switching in space-constrained designs. Select this device when your battery-powered or portable application demands ultra-low 31mΩ Rds(on) at 4.5V and 3.9A continuous drain current. Its key advantage is the 850mV max Vgs(th), enabling direct drive from 1.8V logic and low-voltage MCUs without a level shifter. The 12nC gate charge allows efficient high-frequency switching with minimal drive power. Key applications include load switches, DC-DC converter synchronous rectification, battery protection circuits, and power distribution in smartphones, wearables, IoT sensors, and portable medical devices. The -55°C to +150°C junction range ensures robust performance in harsh environments. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.22 |
| 100+ | $ 0.17 |
| 750+ | $ 0.14 |
| 1500+ | $ 0.13 |
| 3000+ | $ 0.12 |
Technical Specifications
- Part No.SI2312BDS-T1-E3
- Series TrenchFET®
- Category Discrete Semiconductor Products
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±8V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 850mV @ 250µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 31 mOhm @ 5A, 4.5V
- Power Dissipation (Max) 750mW (Ta)
- Supplier Device Package SOT-23-3 (TO-236)
- Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
- Drain to Source Voltage (Vdss) 20V
- Input Capacitance (Ciss) (Max) @ Vds -
- Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V