SI3417DV-T1-GE3 VISHAY Power MOSFET

The SI3417DV-T1-GE3 from Vishay is a P-channel TrenchFET® power MOSFET designed for high-efficiency load switching and power management. For selection, its key strengths are an ultra-low 25.2mΩ on-resistance at 10V and an 8A continuous drain current, enabling minimal conduction losses in compact designs. The 30V breakdown voltage suits typical portable electronics rails, while logic-level drive (fully enhanced at 4.5V) allows direct connection to microcontrollers without level shifters. Its ±20V gate voltage rating adds robust ESD handling. In application, it excels as a load switch in smartphones, tablets, and notebooks for power rail sequencing and battery protection. It is also ideal for DC-DC converter high-side switching in set-top boxes and networking equipment, and motor control in portable tools. The small TSOP-6 package and 2W power dissipation capability make it perfect for space-constrained, battery-operated devices where efficiency and thermal management are critical. In stock at HL Electronics – request a quote for fast delivery.