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SI4122DY-T1-GE3 VISHAY Power MOSFET
The SI4122DY-T1-GE3 from Vishay is a N-channel 40V TrenchFET® MOSFET in an 8-SOIC surface-mount package, optimized for high-efficiency power switching in compact designs. For selection, it delivers continuous drain current up to 27.2A with a maximum Rds(on) of 4.5mΩ at 10V, minimizing conduction losses. A gate charge of 95nC and ±25V gate-source voltage suit high-frequency hard-switching topologies. Power dissipation reaches 3W ambient/6W case across a wide -55°C to +150°C junction range. In application, it excels in synchronous rectification for AC-DC adapters, DC-DC converters for servers and telecom, motor-drive circuits, battery management, load switching in automotive and industrial systems, and power tools where a compact footprint, low on-resistance, and robust thermal performance are critical. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.09 |
| 100+ | $ 0.94 |
| 1250+ | $ 0.90 |
| 2500+ | $ 0.87 |
| 37500+ | $ 0.86 |
| 50000+ | $ 0.86 |
Technical Specifications
- Part No.SI4122DY-T1-GE3
- Series TrenchFET®
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer Vishay Siliconix
- Mounting Type Surface Mount
- Vgs(th) (Max) 2.5V @ 250µA
- Base Product Number SI4122
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 3W (Ta), 6W (Tc)
- Supplier Device Package 8-SOIC
- Qg - Gate Charge (Max) @ Vgs 95 nC @ 10 V
- Vgs - Gate-Source Voltage (Max) ±25V
- Vds - Drain-Source Breakdown (Vdss) 40 V
- Ciss - Input Capacitance (Max) @ Vds 4200 pF @ 20 V
- Id - Continuous Drain Current (25°C) 27.2A (Tc)
- Rds(on) - Drain-Source Resistance (Max) 4.5mOhm @ 15A, 10V