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SI4401BDY-T1-E3 VISHAY Power MOSFET
The SI4401BDY-T1-E3 from Vishay is a TrenchFET® P-channel enhancement-mode power MOSFET, optimized for high-side load switching and power distribution applications where compact footprint and simplified drive circuitry are essential. For selection, key specifications include a -40V drain-source breakdown voltage, -8.7A continuous drain current, and an ultra-low on-resistance of 14mΩ at 10V and 10.5A, minimizing conduction losses in medium-voltage bus systems. The gate threshold voltage is 3V with ±20V gate-source tolerance and a gate charge of 55nC at 5V. The device delivers 1.5W power dissipation and operates across -55°C to +150°C in an 8-pin SOIC surface-mount package. In application, it is ideally suited for 24V/36V industrial power distribution and load switching, battery backup and power path management in telecom systems, and high-side switching in non-synchronous DC-DC converters. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.78 |
| 100+ | $ 0.65 |
| 1250+ | $ 0.59 |
| 2500+ | $ 0.56 |
Technical Specifications
- Part No.SI4401BDY-T1-E3
- Series TrenchFET®
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type P-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Id @ 25°C 8.7A (Ta)
- Technology MOSFET (Metal Oxide)
- Vds (Vdss) 40 V
- Part Status Obsolete
- Manufacturer Vishay Siliconix
- Mounting Type Surface Mount
- Qg (Max) @ Vgs 55 nC @ 5 V
- Ciss (Max) @ Vds -
- Vgs(th) (Max) @ Id 3V @ 250µA
- Base Product Number SI4401
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 1.5W (Ta)
- Rds(on) (Max) @ Id, Vgs 14mOhm @ 10.5A, 10V
- Supplier Device Package 8-SOIC