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SI4406DY-T1-E3 VISHAY Power MOSFET

SI4406DY-T1-E3 - VISHAY - main product image
Part No.:SI4406DY-T1-E3
Brand:VISHAY
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.27
100+ $ 0.21
1250+ $ 0.18
2500+ $ 0.17

Technical Specifications

  • Part No.SI4406DY-T1-E3
  • Category Discrete Semiconductor Products
  • Series TrenchFET®
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 30V
  • Current - Continuous Drain (Id) @ 25°C 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs(th) (Max) @ Id 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds -
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs 4.5 mOhm @ 20A, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-SO
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