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SI8483DB-T2-E1 VISHAY Power MOSFET

SI8483DB-T2-E1 - VISHAY - main product image
Part No.:SI8483DB-T2-E1
Brand:VISHAY
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.29
100+ $ 0.23
750+ $ 0.21
1500+ $ 0.20
3000+ $ 0.19

Technical Specifications

  • Part No.SI8483DB-T2-E1
  • Series TrenchFET®
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type P-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±10V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 800mV @ 250µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 26 mOhm @ 1.5A, 4.5V
  • Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
  • Supplier Device Package 6-Micro Foot™
  • Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
  • Drain to Source Voltage (Vdss) 12V
  • Input Capacitance (Ciss) (Max) @ Vds 1840pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
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