home icon > Goods Details Page > SIR626DP-T1-RE3

SIR626DP-T1-RE3 VISHAY Power MOSFET

SIR626DP-T1-RE3 - VISHAY - main product image
Part No.:SIR626DP-T1-RE3
Brand:VISHAY
Date Code:
Stock:19,338
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.89
100+ $ 0.74
750+ $ 0.68
1500+ $ 0.65
3000+ $ 0.63
18000+ $ 0.63
39000+ $ 0.62

Technical Specifications

  • Part No.SIR626DP-T1-RE3
  • Series TrenchFET® Gen IV
  • Category Discrete Semiconductor Products
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 3.4V @ 250µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 1.7 mOhm @ 20A, 10V
  • Power Dissipation (Max) 104W (Tc)
  • Supplier Device Package PowerPAK® SO-8
  • Gate Charge (Qg) (Max) @ Vgs 78nC @ 7.5V
  • Drain to Source Voltage (Vdss) 60V
  • Input Capacitance (Ciss) (Max) @ Vds 5130pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
📧 📋 💬