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SIR873DP-T1-GE3 VISHAY Power MOSFET
The SIR873DP-T1-GE3 from Vishay is a 150V P-channel TrenchFET® Gen IV MOSFET designed to simplify high-voltage load switching. For selection, the 47.5mΩ on-resistance at 10V enables conduction with minimal loss, while the 37A drain current rating at 25°C provides ample power handling for medium-power applications. The gate charge of 48nC and input capacitance of 1805pF reduce driver burden, allowing faster, more efficient switching. Its ±20V gate-source voltage tolerance offers robust design margin. The PowerPAK® SO-8 package delivers 104W power dissipation in a compact, low-profile surface-mount footprint. In application, it excels as a high-side load switch in telecom and networking equipment, reverse battery protection in industrial systems, and a switching element in DC-DC converters for server power supplies. Its P-channel nature enables simple gate drive without charge pumps, making it ideal for hot-swap controllers, power over Ethernet (PoE) switches, and motor control in portable tools. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.25 |
| 100+ | $ 1.08 |
| 750+ | $ 0.98 |
| 1500+ | $ 0.95 |
| 3000+ | $ 0.91 |
Technical Specifications
- Part No.SIR873DP-T1-GE3
- Series TrenchFET® Gen IV
- Category Discrete Semiconductor Products
- FET Type P-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 47.5 mOhm @ 10A, 10V
- Power Dissipation (Max) 104W (Tc)
- Supplier Device Package PowerPAK® SO-8
- Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
- Drain to Source Voltage (Vdss) 150V
- Input Capacitance (Ciss) (Max) @ Vds 1805pF @ 75V
- Current - Continuous Drain (Id) @ 25°C 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V