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SQ2301ES-T1_GE3 VISHAY Power MOSFET

SQ2301ES-T1_GE3 - VISHAY - main product image
Part No.:SQ2301ES-T1_GE3
Brand:VISHAY
Date Code:
Stock:16,863
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.20
100+ $ 0.16
750+ $ 0.14
1500+ $ 0.14
3000+ $ 0.13

Technical Specifications

  • Part No.SQ2301ES-T1_GE3
  • Series Automotive, AEC-Q101, TrenchFET®
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type P-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±8V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 1.5V @ 250µA
  • Operating Temperature -55°C ~ 175°C (TA)
  • Rds On (Max) @ Id, Vgs 120 mOhm @ 2.8A, 4.5V
  • Power Dissipation (Max) 3W (Tc)
  • Supplier Device Package TO-236 (SOT-23)
  • Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
  • Drain to Source Voltage (Vdss) 20V
  • Input Capacitance (Ciss) (Max) @ Vds 425pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
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