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SQ2398ES-T1_BE3 VISHAY Power MOSFET
The SQ2398ES-T1_BE3 from Vishay is an automotive-grade N-channel TrenchFET® MOSFET that meets rigorous AEC-Q101 standards . For selection, its key specifications include a 100V drain-source breakdown voltage and 1.6A continuous drain current, making it suitable for mid-voltage switching tasks . The typical on-resistance of just 300mΩ at a 10V gate drive ensures efficient operation with minimal conduction losses . A low gate charge of 3.4nC facilitates fast, low-loss switching, while the -55°C to +175°C junction temperature range supports deployment in thermally demanding environments . In application, it is specifically designed for automotive systems including battery management, DC-DC converters, and load switching . Beyond vehicles, it excels in industrial power management, embedded control circuits, and high-reliability switching applications where a compact SOT-23 package and guaranteed performance across a wide temperature range are essential In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.45 |
| 100+ | $ 0.36 |
| 750+ | $ 0.32 |
| 1500+ | $ 0.30 |
| 3000+ | $ 0.29 |
Technical Specifications
- Part No.SQ2398ES-T1_BE3
- Vdss 100 V
- Series TrenchFET®
- Ratings Automotive, AEC-Q101
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Id @ 25°C 1.6A (Tc)
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer Vishay Siliconix
- Mounting Type Surface Mount
- Qg (Max) @ Vgs 3.4 nC @ 10 V
- Ciss (Max) @ Vds 152 pF @ 50 V
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Base Product Number SQ2398
- Operating Temperature -55°C ~ 175°C (TJ)
- Power Dissipation (Max) 2W (Tc)
- Rds(on) (Max) @ Id, Vgs 300mOhm @ 1.5A, 10V
- Supplier Device Package SOT-23-3 (TO-236)