> Goods Details Page
> SQ2398ES-T1_GE3
SQ2398ES-T1_GE3 VISHAY Power MOSFET
The SQ2398ES-T1_GE3 from Vishay is an automotive-grade N-channel TrenchFET® MOSFET that meets AEC-Q101 standards. For selection, it combines a 100V breakdown voltage with a 1.6A continuous drain current in a tiny SOT-23 package, making it exceptional for high-voltage, low-power switching in space-constrained designs. The gate threshold is a maximum of 3.5V, easily driven by 5V logic, while a very low total gate charge of just 3.4nC enables fast, efficient switching at high frequencies. Its 300mΩ on-resistance offers a solid efficiency balance for its class. In application, it excels in automotive engine management, transmission control units, and battery management systems where high-temperature operation up to 175°C is required. It's also ideal for industrial PLCs, power tools, and LED lighting drivers, functioning perfectly as a high-side load switch, relay replacement, or DC-DC converter switch in harsh, thermally demanding environments. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.28 |
| 100+ | $ 0.22 |
| 750+ | $ 0.20 |
| 1500+ | $ 0.19 |
| 3000+ | $ 0.18 |
| 18000+ | $ 0.17 |
| 39000+ | $ 0.17 |
Technical Specifications
- Part No.SQ2398ES-T1_GE3
- Series Automotive, AEC-Q101, TrenchFET®
- Category Discrete Semiconductor Products
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 300 mOhm @ 1.5A, 10V
- Power Dissipation (Max) 2W (Tc)
- Supplier Device Package SOT-23-3 (TO-236)
- Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 10V
- Drain to Source Voltage (Vdss) 100V
- Input Capacitance (Ciss) (Max) @ Vds 152pF @ 50V
- Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V