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SQ3427AEEV-T1_GE3 VISHAY Power MOSFET

SQ3427AEEV-T1_GE3 - VISHAY - main product image
Part No.:SQ3427AEEV-T1_GE3
Brand:VISHAY
Date Code:
Stock:5,695
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.37
100+ $ 0.29
750+ $ 0.26
1500+ $ 0.25
3000+ $ 0.23
18000+ $ 0.23
39000+ $ 0.23

Technical Specifications

  • Part No.SQ3427AEEV-T1_GE3
  • Series Automotive, AEC-Q101, TrenchFET®
  • Category Discrete Semiconductor Products
  • FET Type P-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 2.5V @ 250µA
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 95 mOhm @ 4.5A, 10V
  • Power Dissipation (Max) 5W (Tc)
  • Supplier Device Package 6-TSOP
  • Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
  • Drain to Source Voltage (Vdss) 60V
  • Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
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