SQJ479EP-T1_GE3 VISHAY Power MOSFET

The SQJ479EP-T1_GE3 from Vishay is an automotive-grade 80V P-channel TrenchFET® MOSFET qualified to AEC-Q101 standards. For selection, its 33mΩ on-resistance at 10V and 32A drain current at 25°C are combined with a logic-level gate threshold of just 2.5V, enabling direct drive from microcontrollers without charge pumps. The 80V drain-to-source voltage provides ample margin for 24V and 48V automotive systems. Its gate charge of 150nC at 10V and 4500pF input capacitance suit moderate-frequency switching designs. With a 68W power dissipation and PowerPAK® SO-8 surface-mount package, it handles significant thermal loads in a compact footprint. In application, it excels as a high-side switch in automotive body electronics, reverse battery protection circuits, and motor control for power windows and seat adjustment. It's also ideal for DC-DC converters in infotainment systems and industrial PLCs where simplified high-side drive and robust 175°C operation are critical. In stock at HL Electronics – request a quote for fast delivery.