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SSM3K16CTC,L3F TOSHIBA Power MOSFET
The SSM3K16CTC,L3F from Toshiba is a N-channel U-MOSⅢ MOSFET in a miniature CST3C (0.8×0.6×0.38mm) SMD package, purpose-built for high-speed switching in space-constrained portable electronics. For selection, it features 20V drain-source voltage, 200mA continuous drain current, and 500mW power dissipation. The device delivers a maximum RDS(on) of 2.2Ω at 4.5V and 100mA, with a gate threshold voltage of 1.0V and an input capacitance of just 12pF. Its 1.5V/4.5V drive voltage enables direct logic-level operation from microcontrollers. In application, it excels in high-speed switching circuits, analog switches, and load management within smartphones, tablets, IoT sensor nodes, and industrial automation equipment. It is equally suited for power management in battery-powered medical monitors, consumer wearables, and compact embedded systems where ultra-small footprint, fast switching speed, and low drive voltage are critical. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.30 |
| 100+ | $ 0.24 |
| 500+ | $ 0.22 |
| 2500+ | $ 0.21 |
| 5000+ | $ 0.20 |
| 10000+ | $ 0.19 |
| 60000+ | $ 0.19 |
Technical Specifications
- Part No.SSM3K16CTC,L3F
- Series U-MOSIII
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±10V
- Id @ 25°C 200mA (Ta)
- Technology MOSFET (Metal Oxide)
- Vds (Vdss) 20 V
- Part Status Obsolete
- Manufacturer Toshiba Semiconductor and Storage
- Mounting Type Surface Mount
- Qg (Max) @ Vgs -
- Ciss (Max) @ Vds 12pF @ 10V
- Vgs(th) (Max) @ Id 1V @ 1mA
- Base Product Number SSM3K16
- Operating Temperature 150°C (TJ)
- Power Dissipation (Max) 500mW (Ta)
- Rds(on) (Max) @ Id, Vgs 2.2 Ohm @ 100mA, 4.5V
- Supplier Device Package CST3C