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STB12NM50ND ST Power MOSFET
The STB12NM50ND is an N-channel FDmesh II Power MOSFET from STMicroelectronics in D2PAK surface-mount package, featuring 500V drain-source voltage, 0.29Ω typical on-resistance, and 11A continuous drain current . For selection, verify integrated fast-recovery body diode for demanding applications, extremely low gate charge for minimized switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C . Features include FDmesh technology optimized for switching applications requiring fast body diode recovery, low RDS(on) x area for high power density, and surface-mount D2PAK package. Ideal for high-efficiency isolated DC-DC converters for telecom and server power supplies requiring fast body diode recovery, power factor correction (PFC) stages, high-voltage DC-DC converters, and any 500V switching application requiring fast diode performance. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.46 |
| 100+ | $ 1.24 |
| 1000+ | $ 1.20 |
| 15000+ | $ 1.19 |
| 30000+ | $ 1.18 |
Technical Specifications
- Part No.STB12NM50ND
- Model STB12NM50ND
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series FDmesh™ II
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 500 V
- Current - Continuous Drain (Id) 11 A (Tc)
- Rds On (Max) @ Id, Vgs 0.29 Ω @ 5.5 A, 10 V
- Gate Charge (Qg) (Typ) @ Vgs 21 nC @ 10 V
- Input Capacitance (Ciss) (Typ) @ Vds 900 pF @ 25 V
- Power Dissipation (Max) 90 W (Tc)
- Features Fast diode
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D2PAK (TO-263-3)
- Base Product Number STB12NM50ND
- RoHS ROHS3 Compliant
- Standard Package 1000