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STB15N80K5 ST Power MOSFET
The STB15N80K5 is an N-channel MDmesh K5 Power MOSFET from STMicroelectronics in D2PAK surface-mount package, featuring 800 V drain-source voltage, 12 A continuous drain current, and ultra-low on-resistance for high-efficiency power conversion. For selection, verify maximum on-resistance at VGS=10V, gate charge for minimized switching losses, very low intrinsic capacitances, excellent dv/dt capability, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh K5 technology for best-in-class on-resistance per area, fast switching performance, and Zener gate protection for enhanced reliability. Ideal for high-efficiency offline switching power supplies (SMPS) including telecom and server PSUs, power factor correction (PFC) stages, high-voltage DC-DC converters, uninterruptible power supplies (UPS), renewable energy inverters (solar), and any 800 V power conversion application requiring low conduction losses and high reliability in surface-mount D2PAK package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 2.16 |
| 100+ | $ 1.93 |
| 1000+ | $ 1.88 |
Technical Specifications
- Part No.STB15N80K5
- Model STB15N80K5
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ K5
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800 V
- Current - Continuous Drain (Id) 11 A (Tc)
- Rds On (Max) @ Id, Vgs 0.4 Ohm @ 5.5A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100V
- Power Dissipation (Max) 150 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D2PAK (TO-263-3)
- Base Product Number STB15N80K5
- RoHS ROHS3 Compliant
- Standard Package 1000