> Goods Details Page
> STB55NF06T4
STB55NF06T4 ST Power MOSFET
The STB55NF06T4 is an N-channel Power MOSFET from STMicroelectronics in D2PAK (TO-263-3) surface-mount package, featuring 60V drain-source voltage and 55A continuous drain current. For selection, verify on-resistance for low conduction losses, gate charge for minimized switching losses, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +175°C. Features include STripFET technology for low on-resistance, low gate charge for reduced drive requirements, and very low intrinsic capacitances for fast switching. Ideal for low-voltage DC-DC converters, load switching and power path management, battery management systems, motor control (DC motors, pumps), power supplies for consumer electronics, and any 60V high-efficiency switching application requiring low conduction losses in surface-mount D2PAK package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.58 |
| 100+ | $ 0.46 |
| 1000+ | $ 0.44 |
Technical Specifications
- Part No.STB55NF06T4
- RoHS ROHS3 Compliant
- Model STB55NF06T4
- Series STripFET™ II
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Surface Mount
- Standard Package 1000
- Vgs(th) (Max) @ Id 4V @ 250µA
- Base Product Number STB55NF06
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 15 mOhm @ 27.5A, 10V
- Power Dissipation (Max) 100 W (Tc)
- Supplier Device Package D2PAK (TO-263-3)
- Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10V
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) 55 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25V