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STB60NF06LT4 ST Power MOSFET
The STB60NF06LT4 is an N-channel Power MOSFET with logic-level gate drive from STMicroelectronics in D2PAK surface-mount package, featuring 60V drain-source voltage and 60A continuous drain current. For selection, verify on-resistance for low conduction losses, logic-level gate drive compatible with 5V microcontrollers, low gate charge for minimized switching losses, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +175°C. Features include STripFET technology for low on-resistance, compact D2PAK package for surface-mount assembly, and low gate charge for reduced drive requirements. Ideal for low-voltage DC-DC converters, battery management systems, load switching and power path management, motor control (DC motors, pumps), and any 60V high-efficiency switching application requiring logic-level gate drive capability in surface-mount D2PAK package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.01 |
| 100+ | $ 0.86 |
| 1000+ | $ 0.83 |
| 15000+ | $ 0.82 |
| 30000+ | $ 0.81 |
Technical Specifications
- Part No.STB60NF06LT4
- RoHS ROHS3 Compliant
- Model STB60NF06LT4
- Series STripFET™ II
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Features Logic Level Gate
- Packaging Tape & Reel (TR)
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Surface Mount
- Standard Package 1000
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Base Product Number STB60NF06L
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 13 mOhm @ 30A, 10V
- Power Dissipation (Max) 100 W (Tc)
- Supplier Device Package D2PAK (TO-263-3)
- Gate Charge (Qg) (Max) @ Vgs 40 nC @ 5V
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) 60 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25V