> Goods Details Page
> STB6NK90ZT4
STB6NK90ZT4 ST Power MOSFET
The STB6NK90ZT4 is a high-voltage N-channel SuperMESH™ MOSFET with a 900V drain-source rating and 5.8A continuous drain current. Its D2PAK surface-mount package and 140W power dissipation suit compact, high-voltage switching applications. The 2Ω max on-resistance at 10V gate drive and 60.5nC gate charge ensure efficient operation. Ideal for flyback converters, LED lighting drivers, and auxiliary power supplies in industrial and telecom systems. The –55°C to +150°C junction temperature range ensures rugged performance. Select this MOSFET when you need reliable, cost-effective switching in space-constrained designs requiring high blocking voltage and proven avalanche ruggedness. In stock at HL Electronics – request a quote for fast delivery.
Partno：STB6NK90ZT4Encapsulation：
Brand：STParticular Year：
Classification：Packing：
Stock：81620SPQ：0
MOQ：1+Delivery Time：In Stock
- PartNoSTB6NK90ZT4
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series SuperMESH™
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 900V
- Current - Continuous Drain (Id) @ 25°C 5.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 60.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
- Vgs (Max) ±30V
- FET Feature -
- Power Dissipation (Max) 140W (Tc)
- Rds On (Max) @ Id, Vgs 2 Ohm @ 2.9A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D2PAK