STD10NM60N ST Power MOSFET
The STD10NM60N is an N-channel MDmesh Power MOSFET from STMicroelectronics in DPAK surface-mount package, featuring 600V drain-source voltage and 8.5A continuous drain current for high-efficiency power conversion. For selection, verify on-resistance for low conduction losses, gate charge for low switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, very low output capacitance for improved efficiency, and surface-mount DPAK package for automated assembly. Ideal for high-efficiency offline switching power supplies (SMPS), power factor correction (PFC) stages, high-voltage DC-DC converters, LED lighting drivers, and any 600V switching application requiring low conduction losses in DPAK surface-mount package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.65 |
| 100+ | $ 0.54 |
| 1250+ | $ 0.49 |
| 2500+ | $ 0.47 |
Technical Specifications
- Part No.STD10NM60N
- Model STD10NM60N
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 8 A (Tc)
- Rds On (Typ) @ Id, Vgs 0.6 Ω @ 4 A, 10 V
- Power Dissipation (Max) 70 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package DPAK (TO-252-3)
- Base Product Number STD10NM60N
- RoHS ROHS3 Compliant
- Standard Package 2500
