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STD10P6F6 ST Power MOSFET
The STD10P6F6 is a P-channel Power MOSFET from STMicroelectronics in DPAK surface-mount package, featuring -60V drain-source voltage and -10A continuous drain current with logic-level gate drive. For selection, verify on-resistance for conduction losses, logic-level gate drive for direct microcontroller interface, low gate charge for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include STripFET F6 technology for low on-resistance, compact DPAK package for surface-mount assembly, and low gate charge for reduced drive requirements. Ideal for high-side load switching and power path management, battery protection circuits, low-voltage DC-DC converters, reverse polarity protection, and any 60V P-channel switching application requiring logic-level gate drive in surface-mount package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.53 |
| 100+ | $ 0.44 |
| 1250+ | $ 0.40 |
| 2500+ | $ 0.38 |
| 37500+ | $ 0.38 |
| 50000+ | $ 0.38 |
Technical Specifications
- Part No.STD10P6F6
- RoHS ROHS3 Compliant
- Model STD10P6F6
- Series STripFET™
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type P-Channel
- Packaging Tape & Reel (TR)
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Surface Mount
- Standard Package 2500
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Base Product Number STD10P6F6
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 0.022 Ohm @ 5A, 10V
- Power Dissipation (Max) 40 W (Tc)
- Supplier Device Package DPAK (TO-252-3)
- Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10V
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) 10 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25V