STD12NF06L-1 ST Power MOSFET
The STD12NF06L-1 is an N-channel Power MOSFET from STMicroelectronics in TO-251 (IPAK) through-hole package, featuring 60V drain-source voltage and 12A continuous drain current capability . For selection, verify on-resistance for low conduction losses, gate charge for minimized switching losses, logic-level gate drive capability for direct microcontroller interface, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +175°C . Features include low gate charge for reduced drive requirements, very low on-resistance for high efficiency, and through-hole TO-251 package for robust PCB mounting. Ideal for low-voltage high-current switching applications including DC-DC converters, motor control in automotive and industrial systems, power management, battery protection circuits, load switching, and any application requiring 60V voltage rating with 12A current capability where logic-level gate drive simplifies circuit design. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.41 |
| 100+ | $ 0.33 |
| 750+ | $ 0.29 |
| 1500+ | $ 0.28 |
| 3000+ | $ 0.26 |
| 18000+ | $ 0.26 |
| 39000+ | $ 0.26 |
Technical Specifications
- Part No.STD12NF06L-1
- Model STD12NF06L-1
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series STripFET™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) 12 A (Tc)
- Rds On (Max) @ Id, Vgs 0.125 Ohm @ 6A, 5V
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 9 nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25V
- Power Dissipation (Max) 30 W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package IPAK (TO-251-3)
- Base Product Number STD12NF06L
- RoHS ROHS3 Compliant
- Standard Package 1000
