STD18N65M5 ST Power MOSFET

The STD18N65M5 is an N-channel MDmesh V Power MOSFET from STMicroelectronics in DPAK surface-mount package, featuring 650V drain-source voltage, 13A continuous drain current, and low on-resistance for high-efficiency power conversion in surface-mount applications. For selection, verify on-resistance for low conduction losses, gate charge for low switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh V technology for world-leading on-resistance per area, low gate charge for simplified drive requirements, very low output capacitance for improved efficiency, and surface-mount DPAK package for automated assembly. Ideal for high-efficiency offline switching power supplies (SMPS), power factor correction (PFC) stages, high-voltage DC-DC converters, LED lighting drivers, and any 650V switching application requiring low conduction losses in DPAK surface-mount package. In stock at HL Electronics – request a quote for fast delivery.

STD18N65M5 - ST - main product image
Part No.:STD18N65M5
Brand:ST
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.18
100+ $ 1.02
1250+ $ 0.97
2500+ $ 0.94

Technical Specifications

  • Part No.STD18N65M5
  • Model STD18N65M5
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer STMicroelectronics
  • Series MDmesh™ V
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 650 V
  • Current - Continuous Drain (Id) 12 A (Tc)
  • Rds On (Typ) @ Id, Vgs 0.32 Ω @ 6 A, 10 V
  • Power Dissipation (Max) 90 W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package DPAK (TO-252-3)
  • Base Product Number STD18N65M5
  • RoHS ROHS3 Compliant
  • Standard Package 2500
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