STD1NK80Z-1 ST Power MOSFET
The STD1NK80Z-1 is an N-channel Zener-protected SuperMESH Power MOSFET from STMicroelectronics in IPAK (TO-251) through-hole package, featuring 800V drain-source voltage and 1A continuous drain current with 16Ω max on-resistance . For selection, verify built-in back-to-back Zener diodes for ESD protection, 100% avalanche tested for ruggedness, extremely high dv/dt capability for demanding applications, low gate charge for minimized switching losses, and operating junction temperature from -55°C to +150°C . Features include SuperMESH technology for best-in-class on-resistance, integrated Zener protection eliminating external components, and very low intrinsic capacitances for fast switching. Ideal for offline switching power supplies (SMPS) as auxiliary power or low-power primary switch, AC adaptors and battery chargers, LED lighting drivers, and any 800V low-power switching requiring enhanced ESD/gate protection in IPAK through-hole package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.25 |
| 100+ | $ 0.20 |
| 750+ | $ 0.18 |
| 1500+ | $ 0.17 |
| 3000+ | $ 0.16 |
| 18000+ | $ 0.16 |
| 39000+ | $ 0.16 |
Technical Specifications
- Part No.STD1NK80Z-1
- Model STD1NK80Z-1
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800 V
- Current - Continuous Drain (Id) 1 A (Tc)
- Rds On (Max) @ Id, Vgs 13 Ω @ 0.5 A, 10 V
- Vgs(th) (Max) @ Id 4.5 V @ 50 µA
- Gate Charge (Qg) (Typ) @ Vgs 8 nC @ 10 V
- Input Capacitance (Ciss) (Typ) @ Vds 240 pF @ 25 V
- Power Dissipation (Max) 45 W (Tc)
- Features Zener-protected
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package IPAK (TO-251-3)
- Base Product Number STD1NK80Z
- RoHS ROHS3 Compliant
- Standard Package 75
