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STD2N62K3 ST Power MOSFET
The STD2N62K3 is an N-channel SuperMESH3 Power MOSFET from STMicroelectronics in DPAK (TO-252) surface-mount package, featuring 620V drain-source voltage and 2.2A continuous drain current . For selection, verify on-resistance for conduction losses, 100% avalanche tested for ruggedness, extremely high dv/dt capability, very low intrinsic capacitances for fast switching, improved diode reverse recovery characteristics, Zener-protected gate for ESD protection, and operating junction temperature from -55°C to +150°C . Features include SuperMESH3 technology significantly reducing on-resistance versus previous generation, ensuring higher margin in breakdown voltage. Ideal for switching applications in offline power supplies, LED lighting drivers, power factor correction (PFC) stages, auxiliary power supplies, and any 620V low-power switching requiring enhanced reliability. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.71 |
| 100+ | $ 0.59 |
| 1250+ | $ 0.54 |
| 2500+ | $ 0.52 |
| 37500+ | $ 0.51 |
| 50000+ | $ 0.51 |
Technical Specifications
- Part No.STD2N62K3
- Model STD2N62K3
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series SuperMESH™ 3
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 620 V
- Current - Continuous Drain (Id) 2.2 A (Tc)
- Rds On (Max) @ Id, Vgs 2.8 Ω @ 1.1 A, 10 V
- Vgs(th) (Max) @ Id 4.5 V @ 50 µA
- Gate Charge (Qg) (Typ) @ Vgs 9 nC @ 10 V
- Input Capacitance (Ciss) (Typ) @ Vds 240 pF @ 25 V
- Power Dissipation (Max) 45 W (Tc)
- Features 100% avalanche tested, Zener-protected
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package DPAK (TO-252-3)
- Base Product Number STD2N62K3
- RoHS ROHS3 Compliant
- Standard Package 2500