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STD3NK60Z-1 ST Power MOSFET
The STD3NK60Z-1 is an N-channel Zener-protected SuperMESH Power MOSFET from STMicroelectronics in TO-251 (IPAK) through-hole package, featuring 600V drain-source voltage (650V maximum at TJmax) and 2A continuous drain current . For selection, verify maximum on-resistance of 4.3Ω (3.8Ω typical) at VGS=10V, gate charge for low switching losses, input capacitance, 100% avalanche tested for ruggedness, Zener gate protection for enhanced ESD ruggedness, and operating junction temperature from -55°C to +150°C . Features include very low intrinsic capacitances for fast switching, excellent dv/dt capability, and automotive-grade reliability. Ideal for low-power switching applications including offline power supplies, LED lighting drivers, auxiliary power supplies for industrial equipment, power adapters, AC-DC converters, and flyback converters requiring 600V voltage rating with enhanced gate protection in through-hole TO-251 package for robust PCB mounting . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.31 |
| 100+ | $ 0.24 |
| 750+ | $ 0.22 |
| 1500+ | $ 0.21 |
| 3000+ | $ 0.20 |
Technical Specifications
- Part No.STD3NK60Z-1
- Model STD3NK60Z-1
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 3 A (Tc)
- Rds On (Max) @ Id, Vgs 3.6 Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 13.8 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 25V
- Power Dissipation (Max) 70 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package IPAK (TO-251-3)
- Base Product Number STD3NK60Z
- RoHS ROHS3 Compliant
- Standard Package 1000