STD4NK60ZT4 ST Power MOSFET
The STD4NK60ZT4 is an N-channel Zener-protected SuperMESH Power MOSFET from STMicroelectronics in DPAK (TO-252) surface-mount package, featuring 600V drain-source voltage, 4A continuous drain current, and maximum on-resistance of 1.7Ω at VGS=10V. For selection, verify pulsed drain current, total power dissipation of 70W, built-in back-to-back Zener diodes for ESD protection up to 3000V HBM, gate charge of 18.8nC, input capacitance of 510pF at 25V, 100% avalanche tested, and operating junction temperature from -55°C to +150°C. Features include integrated Zener protection eliminating external components, very low intrinsic capacitances for fast switching, and excellent dv/dt capability. Ideal for offline switching power supplies (SMPS) as auxiliary power or small-power primary switch, power factor correction (PFC) stages in low-power applications, high-voltage lighting and LED drivers, and any 600V low-power switching application requiring enhanced ESD/gate protection. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.26 |
| 100+ | $ 0.20 |
| 1250+ | $ 0.17 |
| 2500+ | $ 0.16 |
Technical Specifications
- Part No.STD4NK60ZT4
- RoHS ROHS3 Compliant
- Model STD4NK60ZT4
- Series SuperMESH™
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Surface Mount
- Standard Package 2500
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Base Product Number STD4NK60Z
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 1.7 Ohm @ 2A, 10V
- Power Dissipation (Max) 70 W (Tc)
- Supplier Device Package DPAK (TO-252-3)
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10V
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 4 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25V
