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STD7NM60N ST Power MOSFET
The STD7NM60N is an N-channel Power MOSFET from STMicroelectronics in DPAK (TO-252) surface-mount package, featuring 600V drain-source voltage, 5A continuous drain current, and maximum on-resistance of 0.9Ω at VGS=10V . For selection, verify total power dissipation, gate charge for low switching losses, very low intrinsic capacitances, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh technology for excellent dv/dt capability and reduced EMI, low gate charge for simplified drive requirements. Ideal for offline switching power supplies (SMPS) as auxiliary power or small-power primary switch, power factor correction (PFC) stages in medium-power applications, high-voltage DC-DC converters, LED lighting drivers, and any 600V switching application requiring high efficiency in DPAK surface-mount package . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.47 |
| 100+ | $ 0.39 |
| 1250+ | $ 0.35 |
| 2500+ | $ 0.34 |
| 37500+ | $ 0.34 |
| 50000+ | $ 0.33 |
Technical Specifications
- Part No.STD7NM60N
- Model STD7NM60N
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 4.5 A (Tc)
- Rds On (Max) @ Id, Vgs 0.85 Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 50V
- Power Dissipation (Max) 70 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package DPAK (TO-252-3)
- Base Product Number STD7NM60N
- RoHS ROHS3 Compliant
- Standard Package 2500