STD9N60M2 ST Power MOSFET

The STD9N60M2 is an N-channel MDmesh M2 Power MOSFET from STMicroelectronics in DPAK surface-mount package, featuring 600V drain-source voltage and 6A continuous drain current. For selection, verify maximum on-resistance at VGS=10V, gate charge for low switching losses, very low intrinsic capacitances for fast switching, excellent dv/dt capability, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh M2 technology for best-in-class efficiency, reduced EMI for noise-sensitive designs, low gate charge for simplified drive requirements, and Zener gate protection for enhanced reliability. Ideal for high-efficiency isolated DC-DC converters in telecom and server power supplies, switching power supplies (SMPS) for industrial and consumer equipment, power factor correction (PFC) stages, LED lighting drivers, and any 600V medium-power switching application requiring excellent balance of conduction and switching losses in DPAK surface-mount package. In stock at HL Electronics – request a quote for fast delivery.