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STD9NM60N ST Power MOSFET
The STD9NM60N is an N-channel MDmesh Power MOSFET from STMicroelectronics in DPAK surface-mount package, featuring 600V drain-source voltage and 6.5A continuous drain current. For selection, verify on-resistance for conduction losses, gate charge for low switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, and very low output capacitance. Ideal for offline switching power supplies (SMPS), power factor correction (PFC) stages, high-voltage DC-DC converters, LED lighting drivers, and any 600V switching application requiring high efficiency in DPAK surface-mount package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.47 |
| 100+ | $ 0.39 |
| 1250+ | $ 0.36 |
| 2500+ | $ 0.34 |
Technical Specifications
- Part No.STD9NM60N
- Model STD9NM60N
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 6 A (Tc)
- Rds On (Max) @ Id, Vgs 0.65 Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 50V
- Power Dissipation (Max) 70 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package DPAK (TO-252-3)
- Base Product Number STD9NM60N
- RoHS ROHS3 Compliant
- Standard Package 2500