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STF10NM60N ST Power MOSFET
The STF10NM60N is an N-channel MDmesh Power MOSFET from STMicroelectronics in TO-220FP fully insulated package, featuring 600V drain-source voltage and 7A continuous drain current. For selection, verify on-resistance for conduction losses, gate charge for low switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, very low output capacitance for improved efficiency, and fully insulated TO-220FP package for simplified thermal management. Ideal for high-efficiency offline switching power supplies, power factor correction stages, high-voltage DC-DC converters, LED lighting drivers, and any 600V medium-power switching application requiring low conduction losses with insulated package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.43 |
| 100+ | $ 0.34 |
| 1000+ | $ 0.33 |
| 15000+ | $ 0.32 |
| 30000+ | $ 0.32 |
Technical Specifications
- Part No.STF10NM60N
- RoHS ROHS3 Compliant
- Model STF10NM60N
- Series MDmesh™ II
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tube
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Through Hole
- Standard Package 1000
- Vgs(th) (Max) @ Id 4V @ 250µA
- Base Product Number STF10NM60N
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 0.5 Ohm @ 5A, 10V
- Power Dissipation (Max) 25 W (Tc)
- Supplier Device Package TO-220FP
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10V
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 10 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 50V