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STF13N65M2 ST Power MOSFET

Select the STF13N65M2 for high-voltage switching with minimal gate charge. This 650V, 10A N-channel MOSFET uses MDmesh™ M2 technology, ensuring a low Rds(on) max of 430 mΩ at 10V drive. Key selection criteria include verifying your drain voltage does not exceed 650V and that your gate driver provides a robust 10V. The extremely low input capacitance (590pF) and gate charge (17nC) enable high-speed, low-loss switching. Ideal applications include power factor correction (PFC) circuits, flyback converters, and auxiliary power supplies in servers and telecom equipment. The fully isolated TO-220FP package simplifies mounting and enhances safety in industrial motor drives and LED lighting, operating reliably at a junction temperature up to 150°C. In stock at HL Electronics – request a quote for fast delivery.

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Partno：STF13N65M2Encapsulation：

Brand：STParticular Year：

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Stock：9080SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.469994
Total： $ 0.47
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  • PartNoSTF13N65M2
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Series MDmesh™ M2
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 650V
  • Current - Continuous Drain (Id) @ 25°C 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 590pF @ 100V
  • Vgs (Max) ±25V
  • FET Feature -
  • Power Dissipation (Max) 25W (Tc)
  • Rds On (Max) @ Id, Vgs 430 mOhm @ 5A, 10V
  • Operating Temperature 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220FP
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