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STF13N80K5 ST Power MOSFET
Select the STF13N80K5 for high-voltage power conversion up to 800V. This 12A N-channel MOSFET uses SuperMESH5™ technology, delivering a low Rds(on) max of 450 mΩ when driven at 10V. Key selection criteria include confirming your drain voltage margin below 800V and a gate drive circuit providing 10V for full enhancement. The optimized 29nC gate charge and 870pF input capacitance enable efficient high-frequency switching. Primary applications include quasi-resonant flyback converters for adapters and chargers, high-voltage DC-DC converters in servers, and auxiliary power supplies for solar inverters. The fully isolated TO-220FP through-hole package ensures safe, simplified mounting in motor drives, lighting ballasts, and industrial control equipment, operating reliably across -55°C to 150°C junction temperature. In stock at HL Electronics – request a quote for fast delivery.
Partno：STF13N80K5Encapsulation：
Brand：STParticular Year：
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Stock：37200SPQ：0
MOQ：1+Delivery Time：In Stock
- PartNoSTF13N80K5
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series SuperMESH5™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 870pF @ 100V
- Vgs (Max) ±30V
- FET Feature -
- Power Dissipation (Max) 35W (Tc)
- Rds On (Max) @ Id, Vgs 450 mOhm @ 6A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220FP