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STF14NM50N ST Power MOSFET
The STF14NM50N is an N-channel Power MOSFET from STMicroelectronics in TO-220FP fully insulated package, featuring 500V drain-source voltage, 12A continuous drain current, and maximum on-resistance of 0.28Ω at VGS=10V. For selection, verify gate charge of 27nC at 10V, input capacitance of 816pF, reverse transfer capacitance of 3pF, power dissipation of 90W, threshold voltage of 2V, 100% avalanche tested, and operating junction temperature from -55°C to +150°C. Features include MDmesh technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, very low output capacitance for improved efficiency, and fully insulated TO-220FP package for simplified thermal management without insulating washers. Ideal for high-efficiency offline switching power supplies (SMPS), power factor correction (PFC) stages, high-voltage DC-DC converters, LED lighting drivers, and any 500V medium-power switching application requiring low conduction losses with insulated package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.76 |
| 100+ | $ 0.61 |
| 1000+ | $ 0.58 |
| 15000+ | $ 0.58 |
| 30000+ | $ 0.58 |
Technical Specifications
- Part No.STF14NM50N
- RoHS ROHS3 Compliant
- Model STF14NM50N
- Series MDmesh™ II
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tube
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Through Hole
- Standard Package 1000
- Vgs(th) (Max) @ Id 4V @ 250µA
- Base Product Number STF14NM50N
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 0.28 Ohm @ 6A, 10V
- Power Dissipation (Max) 25 W (Tc)
- Supplier Device Package TO-220FP-3
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10V
- Drain to Source Voltage (Vdss) 500 V
- Current - Continuous Drain (Id) 12 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25V