STF25NM60ND ST Power MOSFET

The STF25NM60ND is an N-channel MDmesh Power MOSFET with fast recovery diode from STMicroelectronics in TO-220FP fully insulated package, featuring 600V drain-source voltage and 20A continuous drain current for high-efficiency switching applications with demanding dv/dt rate. For selection, verify very low recovery charge (Qrr) and time (trr) combined with low RDS(on), extremely low gate charge and input capacitance for fast switching, very low output capacitance for improved efficiency, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include fast-recovery body diode ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters, MDmesh technology optimized for demanding switching applications, and fully insulated TO-220FP package for simplified thermal management. Ideal for high-efficiency isolated DC-DC converters for telecom and server power supplies requiring fast body diode recovery, high-power industrial motor drives and inverters, renewable energy inverters, and any 600V demanding switching application requiring excellent switching performance with fast body diode recovery and insulated package. In stock at HL Electronics – request a quote for fast delivery.