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STF3N62K3 ST Power MOSFET
The STF3N62K3 is an N-channel SuperMESH3 Power MOSFET from STMicroelectronics in TO-220FP fully insulated package, featuring 620V drain-source voltage and 2.7A continuous drain current . For selection, verify on-resistance of 2.5Ω max at VGS=10V, gate charge of 13nC at 10V, input capacitance of 385pF at 25V, power dissipation of 20W, 100% avalanche tested for ruggedness, extremely high dv/dt capability, very low intrinsic capacitances, and operating junction temperature from -55°C to +150°C . Features include SuperMESH3 technology for reduced on-resistance, improved diode reverse recovery, Zener-protected gate, and fully insulated TO-220FP package for simplified thermal management without insulating washers. Ideal for switching applications in offline power supplies, LED lighting, power factor correction, auxiliary power supplies, and any 620V low-power switching requiring enhanced reliability with insulated package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.46 |
| 100+ | $ 0.37 |
| 1000+ | $ 0.35 |
| 15000+ | $ 0.35 |
| 30000+ | $ 0.35 |
Technical Specifications
- Part No.STF3N62K3
- Model STF3N62K3
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series SuperMESH™ 3
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 620 V
- Current - Continuous Drain (Id) 2.7 A (Tc)
- Rds On (Max) @ Id, Vgs 2.2 Ω @ 1.35 A, 10 V
- Vgs(th) (Max) @ Id 4.5 V @ 50 µA
- Gate Charge (Qg) (Typ) @ Vgs 12 nC @ 10 V
- Input Capacitance (Ciss) (Typ) @ Vds 400 pF @ 25 V
- Power Dissipation (Max) 20 W (Tc)
- Features 100% avalanche tested, Zener-protected
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220FP-3
- Base Product Number STF3N62K3
- RoHS ROHS3 Compliant
- Standard Package 1000