STF6N60M2 ST Power MOSFET
The STF6N60M2 is an N-channel MDmesh M2 Power MOSFET from STMicroelectronics in TO-220FP fully insulated package, featuring 600V drain-source voltage and 4A continuous drain current. For selection, verify on-resistance for conduction losses, gate charge for low switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh M2 technology for best-in-class efficiency, reduced EMI for noise-sensitive designs, low gate charge for simplified drive requirements, and fully insulated TO-220FP package for simplified thermal management without insulating washers. Ideal for offline switching power supplies (SMPS), LED lighting drivers, auxiliary power supplies in industrial equipment, flyback converters, power factor correction (PFC) stages, and any 600V low-to-medium power switching application requiring high efficiency with insulated package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.40 |
| 100+ | $ 0.31 |
| 1250+ | $ 0.27 |
| 2500+ | $ 0.26 |
Technical Specifications
- Part No.STF6N60M2
- Model STF6N60M2
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 4.5 A (Tc)
- Rds On (Max) @ Id, Vgs 0.95 Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 100V
- Power Dissipation (Max) 20 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220FP-3
- Base Product Number STF6N60M2
- RoHS ROHS3 Compliant
- Standard Package 1000
