STFW3N150 ST Power MOSFET
The STFW3N150 is an N-channel PowerMOSFET using STMicroelectronics' PowerMESH technology, featuring a 1500V drain-source voltage (VDS), 2.5A continuous drain current, and a maximum RDS(on) of 9Ω in an insulated TO-3PF package with 63W power dissipation . For selection, verify the ±30V gate-source voltage rating, high-speed switching capability with minimized intrinsic capacitances and gate charge, 100% avalanche tested with 450mJ single pulse avalanche energy rating, and operating junction temperature range from -55°C to +150°C . The TO-3PF package offers 3.5kV RMS insulation withstand voltage from leads to external heatsink, simplifying assembly without insulating washers. Applications include high-voltage switching power supplies, power factor correction circuits, off-line UPS systems, capacitor discharge circuits, induction heating systems, and any high-voltage DC-DC converter requiring a rugged, high-voltage power switch with excellent thermal performance. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.63 |
| 50+ | $ 0.50 |
| 300+ | $ 0.47 |
Technical Specifications
- Part No.STFW3N150
- Model STFW3N150
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series PowerMESH™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 1500V
- Current - Continuous Drain (Id) 2.5A (Tc)
- Drive Voltage (Max Rds On) 10V
- Rds On (Max) @ Id, Vgs 9 Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 29.3 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 976 pF @ 25V
- Power Dissipation (Max) 90W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247-3
- Base Product Number STFW3N150
- RoHS ROHS3 Compliant
- Standard Package 600
