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STGB19NC60KDT4 ST IGBTs
The STGB19NC60KDT4 is a very fast IGBT with ultrafast soft-recovery freewheeling diode from STMicroelectronics in D2PAK surface-mount package, featuring 600V collector-emitter voltage, 19A continuous collector current, and trench gate PowerMESH technology for outstanding performance . For selection, verify low on-voltage drop (VCE(sat)) for reduced conduction losses, very soft ultrafast recovery diode for low EMI, lower CRES/CIES ratio for high noise immunity, and operating junction temperature from -55°C to +150°C . Features include PowerMESH technology optimized for high-frequency applications with reduced tfall while maintaining low voltage drop, tight parameter distribution for consistent performance, and co-packaged ultrafast freewheeling diode. Ideal for high-frequency inverters, motor drives, high-frequency switch-mode power supplies (SMPS), power factor correction (PFC) in both hard-switch and resonant topologies, and any 600V high-frequency power conversion requiring low conduction and switching losses with co-packaged diode. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.77 |
| 100+ | $ 1.58 |
| 1000+ | $ 1.54 |
| 15000+ | $ 1.52 |
| 30000+ | $ 1.51 |
Technical Specifications
- Part No.STGB19NC60KDT4
- Model STGB19NC60KDT4
- Category Discrete Semiconductor Products > Transistors > IGBTs
- Manufacturer STMicroelectronics
- Series PowerMESH™
- Packaging Tape & Reel (TR)
- Part Status Active
- Voltage - Collector Emitter Breakdown (Max) 600 V
- Current - Collector (Ic) (Max) 40 A
- Vce(on) (Max) @ Vge, Ic 1.7 V @ 15 V, 25 A
- Gate Charge 41 nC
- Input Capacitance (Cies) 1800 pF @ 25 V
- Power Dissipation (Max) 160 W (Tc)
- Features Ultrafast Diode
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D2PAK (TO-263-3)
- Base Product Number STGB19NC60KDT4
- RoHS ROHS3 Compliant
- Standard Package 1000